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| NTE2309 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pules test: Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Cob Test Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.4A VCE = 5V, IC = 2A Current Gain-Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance VCE = 10V, IC = 0.4A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, f = 1MHz Min - - 10 8 - - - - Typ - - - - 15 - - 120 Max 10 10 - - - 2.0 1.5 - MHz V V pF Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Symbol Test Conditions Min 900 800 7 800 800 900 - - - Typ - - - - - - - - - Max - - - - - - 1.0 3.0 0.7 Unit V V V V V V s s s V(BR)CBO IC = 1mA, IE = 0 V(BR)CBO IC = 5mA, RBE = V(BR)EBO IE = 1mA, IC = 0 VCEO(sus) IC = 6A, IB = 2A, L = 200H VCEX(sus) IC = 2A, IB1 = 0.4A, L= 1mH, IB2 = -0.4A, Clamped IC = 1A, IB1 = 0.2A, L= 2mH, IB2 = -0.2A, Clamped Turn-On Time Storage Time Fall Time ton tstg tf VCC = 400V, IC = 4A, IB1 = 0.8A, IB2 = -1.6A, RL = 100 .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47) |
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